Gamma-ray Irradiation Effects on InAs/GaSb-based nBn IR Detector
Identifieur interne : 002E41 ( Main/Repository ); précédent : 002E40; suivant : 002E42Gamma-ray Irradiation Effects on InAs/GaSb-based nBn IR Detector
Auteurs : RBID : Pascal:11-0232798Descripteurs français
- Pascal (Inist)
- Effet rayonnement, Déformation mécanique, Mesure densité, Détecteur rayonnement, Détecteur IR, Epitaxie jet moléculaire, Courantométrie, Densité courant, Superréseau, Composé binaire, Indium Arséniure, Irradiation gamma, Rayonnement gamma, Tellurure de mercure, Tellurure de cadmium, Fabrication industrielle, InAs, As In, 0130C, 0707D, 0757K.
- Wicri :
- concept : Fabrication industrielle.
English descriptors
- KwdEn :
Abstract
IR detectors operated in a space environment are subjected to a variety of radiation effects while required to have very low noise performance. When properly passivated, conventional mercury cadmium telluride (MCT)-based infrared detectors have been shown to perform well in space environments. However, the inherent manufacturing difficulties associated with the growth of MCT has resulted in a research thrust into alternative detector technologies, specifically type-II Strained Layer Superlattice (SLS) infrared detectors. Theory predicts that SLS-based detector technologies have the potential of offering several advantages over MCT detectors including lower dark currents and higher operating temperatures. Experimentally, however, it has been found that both p-on-n and n-on-p SLS detectors have larger dark current densities than MCT-based detectors. An emerging detector architecture, complementary to SLS-technology and hence forth referred to here as nBn, mitigates this issue via a uni-polar barrier design which effectively blocks majority carrier conduction thereby reducing dark current to more acceptable levels. Little work has been done to characterize nBn IR detectors tolerance to radiation effects. Here, the effects of gamma-ray radiation on an nBn SLS detector are considered. The nBn IR detector under test was grown by solid source molecular beam epitaxy and is composed of an InAs/GaSb SLS absorber (n) and contact (n) and an AlxGa1-xSb barrier (B). The radiation effects on the detector are characterized by dark current density measurements as a function of bias, device perimeter-to-area ratio and total ionizing dose (TID).
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Gamma-ray Irradiation Effects on InAs/GaSb-based nBn IR Detector</title><author><name sortKey="Cowan, Vincent M" uniqKey="Cowan V">Vincent M. Cowan</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Air Force Research Laboratory --Space Vehicles Directorate, 3550 Aberdeen Ave SE, Kirtland AFB</s1><s2>NM 87117</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName></affiliation></author><author><name sortKey="Morath, Christian P" uniqKey="Morath C">Christian P. Morath</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Air Force Research Laboratory --Space Vehicles Directorate, 3550 Aberdeen Ave SE, Kirtland AFB</s1><s2>NM 87117</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName></affiliation></author><author><name sortKey="Swift, Seth M" uniqKey="Swift S">Seth M. Swift</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Air Force Research Laboratory --Space Vehicles Directorate, 3550 Aberdeen Ave SE, Kirtland AFB</s1><s2>NM 87117</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName></affiliation></author><author><name sortKey="Myers, Stephen" uniqKey="Myers S">Stephen Myers</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Center for High Technology Materials, University of New Mexico</s1><s2>Albuquerque, NM 87106</s2><s3>USA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Albuquerque, NM 87106</wicri:noRegion></affiliation></author><author><name sortKey="Gautam, Nutan" uniqKey="Gautam N">Nutan Gautam</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Center for High Technology Materials, University of New Mexico</s1><s2>Albuquerque, NM 87106</s2><s3>USA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Albuquerque, NM 87106</wicri:noRegion></affiliation></author><author><name sortKey="Krishna, Sanjay" uniqKey="Krishna S">Sanjay Krishna</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Center for High Technology Materials, University of New Mexico</s1><s2>Albuquerque, NM 87106</s2><s3>USA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Albuquerque, NM 87106</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0232798</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0232798 INIST</idno><idno type="RBID">Pascal:11-0232798</idno><idno type="wicri:Area/Main/Corpus">003187</idno><idno type="wicri:Area/Main/Repository">002E41</idno></publicationStmt><seriesStmt><idno type="ISSN">0277-786X</idno><title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title><title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term><term>Cadmium tellurides</term><term>Current density</term><term>Current measurement</term><term>Density measurement</term><term>Gamma irradiation</term><term>Gamma radiation</term><term>Indium Arsenides</term><term>Infrared detectors</term><term>Manufacturing</term><term>Mercury tellurides</term><term>Molecular beam epitaxy</term><term>Radiation detectors</term><term>Radiation effects</term><term>Strains</term><term>Superlattices</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Effet rayonnement</term><term>Déformation mécanique</term><term>Mesure densité</term><term>Détecteur rayonnement</term><term>Détecteur IR</term><term>Epitaxie jet moléculaire</term><term>Courantométrie</term><term>Densité courant</term><term>Superréseau</term><term>Composé binaire</term><term>Indium Arséniure</term><term>Irradiation gamma</term><term>Rayonnement gamma</term><term>Tellurure de mercure</term><term>Tellurure de cadmium</term><term>Fabrication industrielle</term><term>InAs</term><term>As In</term><term>0130C</term><term>0707D</term><term>0757K</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Fabrication industrielle</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">IR detectors operated in a space environment are subjected to a variety of radiation effects while required to have very low noise performance. When properly passivated, conventional mercury cadmium telluride (MCT)-based infrared detectors have been shown to perform well in space environments. However, the inherent manufacturing difficulties associated with the growth of MCT has resulted in a research thrust into alternative detector technologies, specifically type-II Strained Layer Superlattice (SLS) infrared detectors. Theory predicts that SLS-based detector technologies have the potential of offering several advantages over MCT detectors including lower dark currents and higher operating temperatures. Experimentally, however, it has been found that both p-on-n and n-on-p SLS detectors have larger dark current densities than MCT-based detectors. An emerging detector architecture, complementary to SLS-technology and hence forth referred to here as nBn, mitigates this issue via a uni-polar barrier design which effectively blocks majority carrier conduction thereby reducing dark current to more acceptable levels. Little work has been done to characterize nBn IR detectors tolerance to radiation effects. Here, the effects of gamma-ray radiation on an nBn SLS detector are considered. The nBn IR detector under test was grown by solid source molecular beam epitaxy and is composed of an InAs/GaSb SLS absorber (n) and contact (n) and an Al<sub>x</sub>Ga<sub>1-x</sub>Sb barrier (B). The radiation effects on the detector are characterized by dark current density measurements as a function of bias, device perimeter-to-area ratio and total ionizing dose (TID).</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0277-786X</s0></fA01><fA02 i1="01"><s0>PSISDG</s0></fA02><fA03 i2="1"><s0>Proc. SPIE Int. Soc. Opt. Eng.</s0></fA03><fA05><s2>7945</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Gamma-ray Irradiation Effects on InAs/GaSb-based nBn IR Detector</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Quantum sensing and nanophotonic devices VIII : 23-27 January 2011, San Francisco, California, United States</s1></fA09><fA11 i1="01" i2="1"><s1>COWAN (Vincent M.)</s1></fA11><fA11 i1="02" i2="1"><s1>MORATH (Christian P.)</s1></fA11><fA11 i1="03" i2="1"><s1>SWIFT (Seth M.)</s1></fA11><fA11 i1="04" i2="1"><s1>MYERS (Stephen)</s1></fA11><fA11 i1="05" i2="1"><s1>GAUTAM (Nutan)</s1></fA11><fA11 i1="06" i2="1"><s1>KRISHNA (Sanjay)</s1></fA11><fA12 i1="01" i2="1"><s1>RAZEGHI (Manijeh)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>SUDHARSANAN (Rengarajan)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>BROWN (Gail J.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Air Force Research Laboratory --Space Vehicles Directorate, 3550 Aberdeen Ave SE, Kirtland AFB</s1><s2>NM 87117</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Center for High Technology Materials, University of New Mexico</s1><s2>Albuquerque, NM 87106</s2><s3>USA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>SPIE</s1><s3>USA</s3><s9>org-cong.</s9></fA18><fA20><s2>79451S.1-79451S.8</s2></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA25 i1="01"><s1>SPIE</s1><s2>Bellingham WA</s2></fA25><fA26 i1="01"><s0>978-0-8194-8482-6</s0></fA26><fA43 i1="01"><s1>INIST</s1><s2>21760</s2><s5>354000174731750530</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. 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Theory predicts that SLS-based detector technologies have the potential of offering several advantages over MCT detectors including lower dark currents and higher operating temperatures. Experimentally, however, it has been found that both p-on-n and n-on-p SLS detectors have larger dark current densities than MCT-based detectors. An emerging detector architecture, complementary to SLS-technology and hence forth referred to here as nBn, mitigates this issue via a uni-polar barrier design which effectively blocks majority carrier conduction thereby reducing dark current to more acceptable levels. Little work has been done to characterize nBn IR detectors tolerance to radiation effects. Here, the effects of gamma-ray radiation on an nBn SLS detector are considered. The nBn IR detector under test was grown by solid source molecular beam epitaxy and is composed of an InAs/GaSb SLS absorber (n) and contact (n) and an Al<sub>x</sub>Ga<sub>1-x</sub>Sb barrier (B). 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